%0 Journal Article
%T Photo-sensitive characteristics of negative resistance turn-around occurring in SIPTH<br>静电感应光电晶闸管负阻转折的光敏特性
%A Ji Tao
%A Yang Licheng
%A Li Hairong
%A He Shanhu
%A Li Siyuan
%A <br>季涛
%A 杨利成
%A 李海蓉
%A 何山虎
%A 李思渊
%J 半导体学报
%D 2009
%I 
%X Influences of light irradiation on the negative resistance turn-around characteristics of static induction photosensitive thyristor (SIPTH) have been experimentally and theoretically studied. As the gate current of SIPTH is increased by the light irradiation, the potential barrier in the channel is reduced due to the increase in voltage drop across the gate series resistance. Therefore, SIPTH can be quickly switched from the blocking state to the conducting state by relatively low anode voltage. The optimal matching relation for controlling anode conducting voltage of SIPTH by light irradiation has also been represented.
%K static induction photosensitive thyristors
%K gate series resistance
%K double injection effect
%K potential bar- rier
%K light-generated carriers<br>静电感应光电晶闸管
%K 栅串联电阻
%K 双注入效应
%K 势垒
%K 光生载流子
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=29652A656A9E6AC561F704000E707178&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=E158A972A605785F&sid=111261BB4169B13A&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0