%0 Journal Article
%T MOS structure fabrication by thermal oxidation of multilayer metal thin films
%A Mohammad Orvatinia
%A Atefeh Chahkoutahi
%A <br>Mohammad Orvatini
%A Atefeh Chahkoutahi
%J 半导体学报
%D 2011
%I 
%X A novel approach for the fabrication of a metal oxide semiconductor(MOS) structure was reported.The process comprises electrochemical deposition of aluminum and zinc layers on a base of nickel-chromium alloy. This two-layer structure was thermally oxidized at 400℃for 40 min to produce thin layers of aluminum oxide as an insulator and zinc oxide as a semiconductor on a metallic substrate.Using deposition parameters,device dimensions and SEM micrographs of the layers,the device parameters were calculated.T...
%K MOS structure
%K electrochemical deposition
%K thermal oxidation
%K C-V curve<br>MOS
%K Structure
%K Electrochemical
%K Deposition
%K Thermal
%K oxidation
%K C-V
%K curve
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=734DF75479CF991A5A17CDD758194AA2&yid=9377ED8094509821&vid=9971A5E270697F23&iid=38B194292C032A66&sid=DA429FCF8127D04E&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0