%0 Journal Article
%T Fabrication of a 120 nm gate-length lattice-matched InGaAs/InAlAsInP-based HEMT<br>120nm栅长晶格匹配InGaAs/InAlAs HEMTs 器件研制
%A Huang Jie
%A Guo Tianyi
%A Zhang Haiying
%A Xu Jingbo
%A Fu Xiaojun
%A Yang Hao
%A Niu Jiebin
%A <br>黄杰
%A 郭天义
%A 张海英
%A 徐静波
%A 付晓君
%A 杨浩
%A 牛洁斌
%J 半导体学报
%D 2010
%I 
%X A new PMMA/PMGI/ZEP520/PMGI four-layer resistor electron beam lithography technology is successfully developed and used to fabricate a 120 nm gate-length lattice-matched In0.53Ga0.47As/In0.52Al0.48As InP-based HEMT, of which the material structure is successfully designed and optimized by our group. A 980 nm ultra-wide T-gate head, which is nearly as wide as 8 times the gatefoot (120 nm), is successfully obtained, and the excellent T-gate profile greatly reduces the parasitic resistance and capacitance effect and effectively enhances the RF performances. These fabricated devices demonstrate excellent DC and RF performances such as a maximum current gain frequency of 190 GHz and a unilateral power-gain gain frequency of 146 GHz.
%K HEMT
%K InP
%K InGaAs/InAlAs
%K cutoff frequency
%K T-shaped gate technology<br>HEMT
%K T形栅
%K 电流截止频率
%K 电子束
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A2A57446B90385B0D71E0D9273513FA7&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=9CF7A0430CBB2DFD&sid=394CD2F50D6790D9&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0