%0 Journal Article
%T Suppression of extension of the photo-sensitive area for a planar-type front-illuminated InGaAs detector by the LBIC technique<br>平面型正照射InGaAs探测器光敏面扩大抑制技术的LBIC研究
%A Li Yongfu
%A Tang Hengjing
%A Li Tao
%A Zhu Yaoming
%A Jiang Peilu
%A Qiao Hui
%A Li Xue
%A Gong Haimei
%A <br>李永富
%A 唐恒敬
%A 李淘
%A 朱耀明
%A 姜佩璐
%A 乔辉
%A 李雪
%A 龚海梅
%J 半导体学报
%D 2010
%I 
%X To suppress the extension of the photo-sensitive area of a planar-type InGaAs detector, the structure of the detector was modified, and the small-diffusion-area diffusion method, circle-type covering contact and guard-ring were introduced. The laser-beam-induced-current (LBIC) technique was used to study the photo responsive characteristics of the photo-sensitive area of different detector structures. It was indicated that, by modifying the size of the diffusion area, the width of the circle-type covering contact, the distance between the guard-ring and the photo-sensitive area and the working status of the guard-ring, extension of the photo-sensitive area could be effectively suppressed, and the detector photo-sensitive area could be exactly defined.
%K InGaAs photodiode
%K LBIC
%K planar type device
%K photo-sensitive area<br>InGaAs探测器
%K LBIC技术
%K 平面器件
%K 光敏面
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B8A7299F4E1F0ACDE0EE6E8A603B97A7&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=CA4FD0336C81A37A&sid=BF23E782199E3310&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0