%0 Journal Article
%T A revised approach to Schottky parameter extraction for GaN HEMT<br>用于GaN HEMT肖特基参数提取的修正方法
%A Wang Xinhu
%A Zhao Miao
%A Liu Xinyu
%A Zheng Yingkui
%A Wei Ke
%A <br>王鑫华
%A 赵妙
%A 刘新宇
%A 郑英奎
%A 魏珂
%J 半导体学报
%D 2010
%I 
%X We carry out a thermal storage research on GaN HEMT at 350 oC for 48 h, and a recess phenomenon is observed in the low voltage section of Schottky forward characteristics. The decrease of 2DEG density will be responsible for the recess phenomenon. Because the conventional method is not suitable for this kind of curve, a revised approach is presented by analyzing the back-to-back Schottky junction energy band to extract Schottky parameters, which leads to a consistent fit effect.
%K AlGaN/GaN HEMT
%K 2DEG
%K thermal storage
%K back-to-back Schottky model<br>AlGaN/GaN
%K ，电子迁移率器件，二维电子气，高温存储，背对背肖特基模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9916C394075E7DB671501E017B366E9D&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=DF92D298D3FF1E6E&sid=8B4B488765E5964A&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0