%0 Journal Article
%T The Bipolar Field-Effect Transistor: VIII. Longitudinal Gradient of Longitudinal Electric Field (Two-MOS-Gates on Pure-Base)
%A Jie Binbin
%A Sah Chihtang
%A <br>揭斌斌
%A 薩支唐
%J 半导体学报
%D 2010
%I 
%X This paper evaluates the electric current terms from the longitudinal gradient of the longitudinal electric field in Bipolar Field-Effect-Transistors (BiFETs) with a pure base and two MOS gates operating in the unipolar (electron) current mode. These nMOS-BiFETs, known as nMOS-FinFETs, usually have electrically short channels compared with their intrinsic Debye length of about 25 μm at room temperatures. These longitudinal electric current terms are important short-channel current components, which have been neglected in the computation of the long-channel electrical characteristics. This paper shows that the long-channel electrical characteristics are substantially modified by the longitudinal electrical current terms when the physical channel length is less than 100 nm.
%K bipolar field-effect transistor
%K pure base
%K intrinsic Debye length
%K long-channel characteristics
%K short-channel correction<br>voltage
%K given
%K short
%K longitudinal
%K Field
%K three
%K issue
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=35AEC97FEF87C83D3DDBFCCF362DE641&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=DF92D298D3FF1E6E&sid=6D240287D3DC1AE7&eid=DF92D298D3FF1E6E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0