%0 Journal Article
%T Diagram representations of charge pumping processes in CMOS transistors<br>CMOS器件中电荷泵过程的图解表示
%A Huang Xinyun
%A Jiao Guangfan
%A Shen Chen
%A Cao Wei
%A Huang Daming
%A Li Mingfu
%A <br>黄新运
%A 焦广泛
%A 沈忱
%A 曹伟
%A 黄大鸣
%A 李名复
%J 半导体学报
%D 2010
%I 
%X A diagram representation method is proposed to interpret the complicated charge pumping (CP) processes. The fast and slow traps in CP measurement are defined. Some phenomena such as CP pulse rise/fall time dependence, frequency dependence, the voltage dependence for the fast and slow traps, and the geometric CP component are clearly illustrated at a glance by the diagram representation. For the slow trap CP measurement, there is a transition stage and a steady stage due to the asymmetry of the electron and hole capture, and the CP current is determined by the lower capturing electron or hole component. The method is used to discuss the legitimacy of the newly developed modified charge pumping method. oindent
%K charge pumping
%K interface-trap generation
%K bias temperature instability
%K modified CP
%K oxide charge oindent<br>电荷泵浦(CP)过程，界面态产生/恢复，偏压温度不稳定性(BTI)，
%K 改良电荷泵浦(MCP)，
%K 氧化层电荷
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=77396850B4992F9E8CF3C6957C244525&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=5D311CA918CA9A03&sid=7ECB4397A46794AC&eid=DF92D298D3FF1E6E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0