%0 Journal Article
%T Silicon Light Emitting Devices in CMOS Technology
%A CHEN Hong-Da
%A LIU Hai-Jun
%A LIU Jin-Bin
%A GU Ming
%A HUANG Bei-Ju
%A <br>陈弘达
%A 刘海军
%A 刘金彬
%A 顾明
%A 黄北举
%J 中国物理快报
%D 2007
%I 
%X Two silicon light emitting devices with different structures are realized in standard 0.35pro complementary metal-oxide-semiconductor （CMOS） technology. They operate in reverse breakdown mode and can be turned on at 8.3 V. Output optical powers of 13.6nW and 12.1 n W are measured at 10 V and l OOmA, respectively~ and both the calculated light emission intensities are more than 1 mW/cm^2. The optical spectra of the two devices are between 600-790 nm with a clear peak near 760 nm.
%K 85
%K 60
%K Jb
%K 42
%K 82
%K Ds
%K 78
%K 20
%K Jq<br>硅元素
%K 光发射
%K CMOS技术
%K 物理学
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=A6F1F92187EC7BB8CDE1CEA318F1719C&yid=A732AF04DDA03BB3&vid=B91E8C6D6FE990DB&iid=CA4FD0336C81A37A&sid=FDC7AF55F77D8CD4&eid=866F8A6B640835A7&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0