%0 Journal Article
%T A low voltage and small hysteresis C60 thin film transistor<br>具有低电压、低“迟滞效应”的C60薄膜晶体管
%A Zhou Jianlin
%A Chen Rengang
%A <br>周建林
%A 陈仁钢
%J 半导体学报
%D 2011
%I 
%X Organic thin film transistors with C60 as an n-type semiconductor have been fabricated. A tantalum pentoxide (Ta2O5)/poly-methylmethacrylate (PMMA) double-layer structured gate dielectric was used. The Ta2O5 layer was prepared by using a simple solution-based and economical anodization technique. Our results demonstrate that double gate insulators can combine the advantage of Ta2O5 with high dielectric constant and polymer insulator for a better interface with the organic semiconductor. The performance of the device can be improved obviously with double gate insulators, compared to that obtained by using a single Ta2O5 or PMMA insulator. Then, a good performance n-type OTFT, which can work at 10 V with mobility, threshold voltage and on/off current ratio of, respectively, 0.26 cm2/(V.s), 3.2 V and 8.31 × 104 , was obtained. Moreover, such an OTFT shows a negligible ``hysteresis effect' contributing to the hydroxyl-free insulator surface.
%K organic thin film transistors
%K C60
%K double gate dielectrics<br>有机薄膜晶体管
%K C60
%K 双绝缘层
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E83E7161F8D6980D40ADC15A3E05AFA6&yid=9377ED8094509821&vid=9971A5E270697F23&iid=0B39A22176CE99FB&sid=C8BDA320CDBF89A7&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0