%0 Journal Article
%T AlGaN/GaN double-channel HEMT<br>AIGaN/GaN double-channel HEMT
%A Quan Si
%A Hao Yue
%A Ma Xiaohu
%A Zheng Pengtian
%A Xie Yuanbin
%A <br>全思
%A 郝跃
%A 马晓华
%A 郑鹏天
%A 谢元斌
%J 半导体学报
%D 2010
%I 
%X The fabrication of AlGaN/GaN double-channel high electron mobility transistors on sapphire substrates is reported. Two carrier channels are formed in an AlGaN/GaN/AlGaN/GaN multilayer structure. The DC performance of the resulting double-channel HEMT shows a wider high transconductance region compared with single-channel HEMT. Simulations provide an explanation for the influence of the double-channel on the high transconductance region. The buffer trap is suggested to be related to the wide region of high transconductance. The RF characteristics are also studied.
%K high-electron mobility transistor
%K AlGaN/GaN/AlGaN/GaN
%K double-channel<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=AD2C77879E9DD60C18ED370D87F0E72E&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=E158A972A605785F&sid=0FA0889A2235ADDB&eid=38B194292C032A66&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0