%0 Journal Article
%T Residual impurities and electrical properties of undoped LEC InAs single crystals
非掺杂LEC-InAs单晶的残留杂质与电学性能研究
%A Hu Weijie
%A Zhao Youwen
%A Sun Wenrong
%A Duan Manlong
%A Dong Zhiyuan
%A Yang Jun
%A
胡炜杰
%A 赵有文
%A 孙文荣
%A 段满龙
%A 董志远
%A 杨俊
%J 半导体学报
%D 2010
%I
%X Impurities and their influence on the properties of InAs single crystals have been studied by combining the results of glow discharge mass spectrometry (GDMS), Hall measurements, Raman scattering and infrared absorption. The results indicate that carbon is a major impurity in LEC-InAs single crystals and exhibits a significant influence on the electrical and optical properties.
%K InAs
%K single crystal
%K impurity
%K defect
InAs,单晶,杂质,缺陷
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8DC081057A629652AFBA0F3056F2B0C3&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=E158A972A605785F&sid=C2AAC319E6E70BD9&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0