%0 Journal Article
%T Growth of strained-Si material using low-temperature Si combined with ion implantation technology<br>低温硅结合离子注入技术制备应变Si材料
%A Yang Hongdong
%A Yu Qi
%A Wang Xiangzhan
%A Li Jingchun
%A Ning Ning
%A Yang Mohua
%A <br>杨洪东
%A 于奇
%A 王向展
%A 李竞春
%A 宁宁
%A 杨谟华
%J 半导体学报
%D 2010
%I 
%X In order to fabricate strained-Si MOSFETs, we present a method to prepare strained-Si material with highquality surface and ultra-thin SiGe virtual substrate. By sandwiching a low-temperature Si (LT-Si) layer between a Si buffer and a pseudomorphic Si0.8Ge0.2 layer, the surface roughness root mean square (RMS) is 1.02 nm and the defect density is 1E6 cm-2 owing to the misfit dislocations restricted to the LT-Si layer and the threading dislocations suppressed from penetrating into the Si0.8Ge0.2 layer. By employing PC implantation and rapid thermal annealing, the strain relaxation degree of the Si0.8Ge0.2 layer increases from 85.09% to 96.41% and relaxation is more uniform. Meanwhile, the RMS (1.1 nm) varies a little and the defect density varies little. According to the results, the method of combining an LT-Si layer with ion implantation can prepare high-quality strained-Si material with a high relaxation degree and ultra-thin SiGe virtual substrate to meet the requirements of device applications.
%K low-temperature silicon
%K strained silicon
%K ion implantation
%K SiGe virtual substrate<br>低温硅
%K 应变硅
%K 离子注入
%K 锗硅虚拟衬底
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=753275E16BE534ADC54140809A00AAE0&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=B31275AF3241DB2D&sid=43614C4425096724&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0