%0 Journal Article
%T Kirk effect and suppression for 20 V planar active-gap LDMOS<br>Kirk effect and suppressing for 20 V planar active-gap LDMOS Nie Weidong(聂卫东)1, 2, Yi Fayou(易法友)2, and Yu Zongguang(于宗光)1
%A Nie Weidong
%A Yi Fayou
%A Yu Zongguang
%A <br>聂卫东
%A 易法友
%A 于宗光
%J 半导体学报
%D 2013
%I 
%X For 20 V planar active-gap lateral double-diffused MOSFET (LDMOS), the sectional channel is utilized to decrease the electric field in the n-drift region below the poly gate edge in the off-state, compared with the conventional single channel. Then the n-drift concentration can be increased to decrease the Kirk effect, while keeping off-state breakdown voltage Vbd unchanged. Meanwhile the influence of the n-drift concentration and the n-drift length Ldrift (the drain n+ diffusion to gate spacing) which are related to the Kirk effect is discussed. The trade-offs between Rdson·Area, breakdown voltage Vbd and the electrical safe operating area (e-SOA) performance of LDMOS are considered also. Finally the proposed planar active-gap LDMOS devices with varied values of Ldrift are experimentally demonstrated. The experimental results show that the Kirk effect can be greatly suppressed with slight increase in the Rdson·Area parameter.
%K planar active-gap LDMOS
%K sectional channel
%K n-drift length Ldrift
%K n-drift concentration
%K Kirk effect
%K electrical safe operating area<br>planer
%K active-gap
%K LDMOS
%K n-漂移区长度（n
%K 漏扩散到栅的间距）
%K n-漂移区浓度
%K I-V
%K 特性
%K Kirk
%K 效应
%K e-SOA
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A2B81C56D90B149CCA647526B72792EB&yid=FF7AA908D58E97FA&vid=339D79302DF62549&iid=94C357A881DFC066&sid=3DE10300D7377C5A&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=7