%0 Journal Article
%T Growth and electrical properties of high-quality Mg-doped p-type Al0.2Ga0.8N films<br>高质量Mg掺杂的P型Al0.2Ga0.8N的生长和电学特性研究
%A Zhou Xiaowei
%A Li Peixian
%A Xu Shengrui
%A Hao Yue
%A <br>周小伟
%A 李培咸
%A 许晟瑞
%A 郝跃
%J 半导体学报
%D 2009
%I 
%X The growth of high-performance Mg-doped p-type AlxGa1-xN (x= 0.2) using metal-organic chemical vapor deposition is reported. The influence of growth conditions (growth temperature, magnesium flow, and thermal annealing temperature) on the electrical properties of Mg-doped p-type AlxGa1-xN (x= 0.2) has been investigated. Using the optimized conditions, we obtained a minimum p-type resistivity of 0.71?·cm for p-type AlGaN with 20% Al fraction.
%K p-type AlGaN
%K thermal annealing
%K resistivity<br>P型AlGaN
%K 热退火
%K 电阻率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=3509269233A8300ACC17A431AAF05015&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=E158A972A605785F&sid=C1E1D517952D8C11&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0