%0 Journal Article
%T Fabrication and characterization of a GaN/(4H)SiC vertical pn power diode using direct and interfaced epitaxial-growth approaches<br>Fabrication and Characterization of GaN/(4H)SiC Vertical PN Power Diode using Direct and Interfaced Epitaxial-Growth Approaches
%A Bose Srikanta
%A Mazumder S K
%A <br>Bose Srikant
%A MazumderSK
%J 半导体学报
%D 2013
%I 
%X We report the fabrication and characterization of a vertical pn power diode which is realized using two separate epitaxial-growth mechanisms: (a) p-GaN over p-(4H)SiC, and (b) p-GaN over n-(4H)SiC with AlN as the interface layer. In all of the cases, n+-doped (4H)SiC serves as the cathode substrate. Pd(200  )/Au(10000  ) is used for the anode contact while Ni(1000  ) is used for the bottom cathode contact. The measured forward drop of the pn diode with AlN as the interface material is found to be around 5.1 V; whereas, it is 3 V for the other sample structure. The measured reverse-blocking voltage is found to be greater than 200 V.
%K GaN
%K (4H)SiC
%K vertical pn power diode
%K power electronics<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=DFEDDF274BE1BF802A01784254C7F792&yid=FF7AA908D58E97FA&vid=339D79302DF62549&iid=E158A972A605785F&sid=34E193FF8FD7B13D&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8