%0 Journal Article
%T Characteristics and optimization of 4H-SiC MESFET with a novel p-type spacer layer incorporated with a field-plate structure based on improved trap models<br>基于改进陷阱模型的新型p型隔离层结合场板结构的4H-SiC MESFET的特性研究与优化
%A Song Kun
%A Chai Changchun
%A Yang Yintang
%A Jia Hujun
%A Zhang Xianjun
%A Chen Bin
%A <br>宋坤
%A 柴常春
%A 杨银堂
%A 贾护军
%A 张现军
%A 陈斌
%J 半导体学报
%D 2011
%I 
%X A novel structure of 4H-SiC MESFETs is proposed which focuses on surface trap suppression. Investigation has been made on the characteristics based on physical models for material properties and improved trap models which are proven to have good agreements with experimental data. Compared with characteristics of former fabrication utilized structure with corresponding measured data, proposed structure is shown to improve device properties in comprehensive aspects. A p-type spacer layer introduced in proposed structure is shown to suppress surface trap effect and reduce gate-drain capacitance under large drain voltage in microwave operation. P-type spacer layer incorporated with a field-plate improves the electric field distribution on the gate edge while spacer layer induces less gate-drain capacitance than the well recognized buried gate incorporated with field-plate (BG-FP) structure. For microwave applications, 4H-SiC MESFET for proposed structure has larger gate-lag ratio in saturation region due to better surface trap isolation from conductive channel. For high power applications, proposed structure allows higher operating voltage as well. The maximum saturation current density of 460mA/mm is yielded. Also, the gate-lag ratio under drain voltage of 20V is close to 90%. In addition, a 5% and a 17.8% improvement in fT and fmax are obtained compared with BG-FP MESFET in AC simulation, respectively. Parameters and dimensions of proposed structure are optimized to make the best of device for microwave applications and provide reference for device design.
%K 4H-SiC
%K MESFET
%K surface trap
%K p-type spacer layer
%K microwave application<br>4H-SiC
%K 肖特基栅场效应晶体管
%K 表面陷阱
%K p型隔离层
%K 微波应用
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B70A235664D163BAB15660D1BA869E52&yid=9377ED8094509821&vid=9971A5E270697F23&iid=DF92D298D3FF1E6E&sid=5CF68C375B393257&eid=B31275AF3241DB2D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0