%0 Journal Article
%T MOS Capacitance–Voltage Characteristics: IV. Trapping Capacitance from 3-Charge-State Impurities
%A 揭斌斌
%A 薩支唐
%J 半导体学报
%D 2012
%I 
%X Metal-Oxide-Semiconductor Capacitance-Voltage (MOSCV) characteristics containing giant carrier trapping capacitances from 3-charge-state or 2-energy-level impurities are presented for not-doped, n-doped, p-doped and compensated silicon containing the double-donor sulfur and iron, the double-acceptor zinc, and the amphoteric or one-donor and one-acceptor gold and silver impurities. These impurities provide giant trapping capacitances at trapping energies from 200 to 800 meV (50 to 200 THz and 6 to 1.5 μm), which suggest potential sub-millimeter, far-infrared and spin electronics applications.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=AF837C3964F7310F62696AB9F5026E6D&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=CA4FD0336C81A37A&sid=60937B755AAB74BE&eid=2A8D03AD8076A2E3&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8