%0 Journal Article
%T Calculation of band edge levels of strained Si/(111)Si1-xGex<br>应变Si/(111)Si1-xGex带边能级计算
%A Song Jianjun
%A Zhang Heming
%A Hu Huiyong
%A Dai Xianying
%A Xuan Rongxi
%A <br>宋建军
%A 张鹤鸣
%A 胡辉勇
%A 戴显英
%A 宣荣喜
%J 半导体学报
%D 2010
%I 
%X Calculations were performed on the band edge levels of (111)-biaxially strained Si on relaxed Si1-xGex alloy using the k·p perturbationmethod coupled with deformation potential theory. The results show that the conduction band (CB) edge is characterized by six identicalvalleys, that the valence band (VB) edge degeneracies are partially lifted, and that both the CB and VB edge levels move up in electron energy as the Ge fraction (x) increases. In addition, the dependence of the indirect bandgap and the VB edge splitting energy on x was obtained. Quantitative data from the results supply valuable references for Si-based strained device design.
%K strained Si
%K band edge
%K k?p method<br>应变Si，带边，K.P
%K 法
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A2044D46B916200C6199F6C91C3A2291&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=CA4FD0336C81A37A&sid=8E9370B8F6F70766&eid=38B194292C032A66&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=10