%0 Journal Article
%T A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs<br>非对称异质双栅应变硅MOSFETs 二维模型研究
%A Li Jin
%A Liu Hongxi
%A Yuan Bo
%A Cao Lei
%A Li Bin
%A <br>李劲
%A 刘红侠
%A 袁博
%A 曹磊
%A 李斌
%J 半导体学报
%D 2011
%I 
%X On the basis of the exact resultant solution of two dimensional Poisson's equations, a new accurate two-dimensional analytical model comprising surface channel potentials, a surface channel electric field and a threshold voltage for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs is successfully developed. The model shows its validity by good agreement with the simulated results from a two-dimensional numerical simulator. Besides offering a physical insight into device physics, the model provides basic design guidance for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs.
%K dual material gate
%K double-gate MOSFET
%K strained-Si
%K short-channel effect
%K the drain-induced barrier-lowering<br>异质栅，双栅MOSFETs，应变硅，短沟道效应，漏致势垒降低.
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=3DFC88ABA190FA30E8E805B60C4C4B27&yid=9377ED8094509821&vid=9971A5E270697F23&iid=E158A972A605785F&sid=0B25D1FFFBFDCB93&eid=DF92D298D3FF1E6E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0