%0 Journal Article
%T Characteristics of blocking voltage for power 4H-SiC BJTs with mesa edge termination<br>台面结终端高压4H-SiC BJTs的击穿特性研究
%A Zhang Qian
%A Zhang Yuming
%A Zhang Yimen
%A <br>张倩
%A 张玉明
%A 张义门
%J 半导体学报
%D 2010
%I 
%X According to the avalanche ionization theory, a computer-based analysis is performed to analyze the structural parameters of single- and multiple-zone junction termination extension (JTE) structures for 4H-SiC bipolar junction transistors (BJTs) with mesa structure. The calculation results show that a single-zone JTE can yield high breakdown voltages if the activated JTE dose and the implantation width are controlled precisely and a multiple-zone JTE method can decrease the peak surface field while still maintaining a high blocking capability. The influences of the positive and negative surface or interface states on the blocking capability are also shown. These conclusions have a realistic meaning in optimizing the design of a mesa power device.
%K 4H-SiC
%K BJTs
%K blocking voltage
%K junction termination extension
%K mesa device<br>4H-SiC，BJTs，击穿电压，结终端延伸，台面型器件
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=06E29ACE5E69736050F32525D65C4EC1&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=DF92D298D3FF1E6E&sid=876D199E79CC58D2&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0