%0 Journal Article
%T Photoelectrochemical etching of uniform macropore array on full 5-inch silicon wafers<br>光电化学刻蚀法在整个5英寸硅片上制作均匀深孔阵列
%A Zhao Zhigang
%A Guo Jinchuan
%A Lei Yaohu
%A Niu Hanben
%A <br>赵志刚
%A 郭金川
%A 雷耀虎
%A 牛憨笨
%J 半导体学报
%D 2010
%I 
%X We analyze the two main factors causing non-uniformity of the etched macropore array first, and then a novel photoelectrochemical etching setup for large area silicon wafers is described. This etching setup refined typical etching setups by a water cooling system and a shower-head shaped electrolyte circulator. Experimental results showed that the uniform macropore array on full 5-inch n-type silicon wafers could be fabricated by this etching setup. The morphology of the macropore array can be controlled by adjusting the corresponding etching parameters.
%K photoelectrochemical etching
%K macropore array
%K large area
%K non-uniformity
%K current density<br>光电化学刻蚀
%K 宏孔阵列
%K 大面积
%K 不均匀性
%K 电流密度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=97E2A474A6654629B5F620E975C4A578&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=DF92D298D3FF1E6E&sid=0D191413BDC4F0A8&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0