%0 Journal Article
%T Temperature self-adaptive program algorithm on 65 nm MLC NOR flash memory<br>65nM MLC NOR型闪存温度自适应编程算法
%A Shi Weihu
%A Hong Zhiliang
%A Hu Chaohong
%A Kang Yong
%A <br>史维华
%A 洪志良
%A 胡潮红
%A 亢勇
%J 半导体学报
%D 2009
%I 
%X This paper presents an implementation for improving muti-level cell NOR flash memory program through-put based on the channel hot electron (CHE) temperature characteristic. The CHE Ig temperature characteristic is analyzed theoretically with the Lucky ele
%K temperature self-adaptive programming
%K 65 nm multi-level cell flash memory
%K program throughput<br>温度自适应编程
%K 65nm
%K MLC
%K NOR闪存
%K 编程
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=36AFE070DD078DF3C2157267FB26FF62&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=5D311CA918CA9A03&sid=9086B49CEF0523A1&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=11