%0 Journal Article
%T Total dose irradiation and hot-carrier effects of sub-micro NMOSFETs<br>深亚微米NMOSFETs总剂量辐射与热载流子效应研究
%A Cui Jiangwei
%A Xue Yaoguo
%A Yu Xuefeng
%A Ren Diyuan
%A Lu Jian
%A Zhang Xingyao
%A <br>崔江维
%A 薛耀国
%A 余学峰
%A 任迪远
%A 卢健
%A 张兴尧
%J 半导体学报
%D 2012
%I 
%X Total dose irradiation and the hot-carrier effects of sub-micro NMOSFETs are studied. The results show that the manifestations of damage caused by these two effects are quite different, though the principles of damage formation are somewhat similar. For the total dose irradiation effect, the most notable damage lies in the great increase of the off-state leakage current. As to the hot-carrier effect, most changes come from the decrease of the output characteristics curves as well as the decrease of trans-conductance. It is considered that the oxide-trapped and interface-trapped charges related to STI increase the current during irradiation, while the negative charges generated in the gate oxide, as well as the interface-trapped charges at the gate interface, cause the degradation of the hot-carrier effect. Different aspects should be considered when the device is generally hardened against these two effects.
%K sub-micro
%K total dose irradiation
%K hot-carrier effect<br>深亚微米，总剂量辐射，热载流子效应
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=AF837C3964F7310FC3966A3050CF1ACA&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=CA4FD0336C81A37A&sid=E4824350A916D9C0&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=20