%0 Journal Article
%T A new double gate SOI LDMOS with a step doping profile in the drift region<br>漂移区阶梯掺杂的双栅SOI LDMOS研究
%A Luo Xiaorong
%A Zhang Wei
%A Gu Jingjing
%A Liao Hong
%A Zhang Bo
%A Li Zhaoji
%A <br>罗小蓉
%A 张伟
%A 顾晶晶
%A 廖红
%A 张波
%A 李肇基
%J 半导体学报
%D 2009
%I 
%X A new double gate SOI LDMOS with a step doping profile in the drift region is proposed. The structure is characterized by one surface gate and another embedded gate under the P-body region. The broadened current flow path and the majority carrier accumula
%K SOI
%K embedded gate
%K electric field
%K breakdown voltage
%K specific on-resistance<br>SOI，栅极，电场，击穿电压，比导通电阻
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C36018152458140B4565E3C03ED1C5D2&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=5D311CA918CA9A03&sid=E5769B58484A51E2&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=10