%0 Journal Article
%T A semi-empirical analytic model for threshold voltage instability in MOSFETs with high-k gate stacks<br>高K栅堆叠结构MOSFET器件阈值电压不稳定度的半经验解析模型
%A He Jin
%A Ma Chenyue
%A Zhang Lining
%A Zhang Jian
%A Zhang Xing
%A <br>何进
%A 马晨月
%A 张立宁
%A 张健
%A 张兴
%J 半导体学报
%D 2009
%I 
%X A semi-empirical analytic model for the threshold voltage instability of a MOSFET is derived from Shockley-Read-Hall (SRH) statistics to account for the transient charging effects in a MOSFET high-k gate stack. Starting from the single energy level and single trap assumption, an analytical expression for the filled trap density in terms of dynamic time is derived from SRH statistics. The semi-empirical analytic model for the threshold voltage instability is developed based on MOSFET device physics between t...
%K high-k gate stack
%K nanoscale MOSFETs
%K interface trap and charges
%K trapping and detrapping
%K threshold voltage dynamic behavior
%K compact modeling<br>高K栅堆叠，纳米级MOSFET，界面态电荷，俘获和释放，阈值电压动态行为，集约模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=D52648CDD41EB2238AF8A573200A4147&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=5D311CA918CA9A03&sid=7ECB4397A46794AC&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=16