%0 Journal Article
%T An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor<br>一种获得四管CMOS图像传感器像素夹断电压的方法
%A Li Binqiao
%A Yu Junting
%A Xu Jiangtao
%A Yu Pingping
%A <br>李斌桥
%A 于俊庭
%A 徐江涛
%A 于平平
%J 半导体学报
%D 2010
%I 
%X An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor is presented. This new approach is based on the assumption that the photon shot noise in image signal is impacted by a potential well structure change of pixel. Experimental results show the measured pinch-off voltage is consistent with theoretical prediction. This technique provides an experimental method to assist the optimization of pixel design in both the photodiode structure and fabrication process for the 4-T CMOS image sensor.
%K pinch-off voltage
%K CMOS image sensor
%K photon shot noise
%K pixel design<br>夹断电压
%K CMOS
%K 图像传感器
%K 光散粒噪声
%K 像素设计
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=CF32D6673A193B53C3F347A3DD7CC322&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=DF92D298D3FF1E6E&sid=71B327BD3EC1A098&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=0