%0 Journal Article
%T A simulation of doping and trap effects on the spectral response of AlGaN ultraviolet detectors<br>A simulation study of doping and traps effects on AlGaN ultraviolet detectors spectral response
%A Sidi Ould Saad Hamady
%A <br>Sidi
%A Ould
%A Saad
%A Hamady
%J 半导体学报
%D 2012
%I 
%X We study, by means of numerical simulation, the impact of doping and traps on the performance of the “solar blind” ultraviolet Schottky detector based on AlGaN. We implemented physical models and AlGaN material properties taken from the literature, or from the interpolation between the binary materials (GaN and AlN) weighted by the mole fractions. We found that doping and traps highly impact the spectral response of the device, and in particular a compromise in the doping concentration must be reached in order to optimize the spectral response of the detector. These results give us a powerful tool to quantitatively understand the impact of elaboration and processing conditions on photodetector characteristics, and thus identify the key issues for the development of the technology.
%K simulation
%K AlGaN
%K ultraviolet detector
%K spectral response<br>数值模拟方法
%K AlGaN
%K 陷阱效应
%K 光谱响应
%K 掺杂浓度
%K 探测器
%K GaN材料
%K 物理模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F1E2B134F3CCFA085A381A3A8B6057CC&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=38B194292C032A66&sid=1A8185C03C89C56D&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9