%0 Journal Article
%T A novel method to enhance the gettering efficiency in p-type Czochralski silicon by a sacrificial porous silicon layer<br>利用多孔硅层增强P型CZ硅中吸杂效率的一种新方法
%A Zhang Caizhen
%A Wang Yongshun
%A Wang Zaixing
%A <br>张彩珍
%A 王永顺
%A 汪再兴
%J 半导体学报
%D 2011
%I 
%X A new two-step phosphorous diffusion gettering(TSPDG) process using a sacrificial porous silicon layer(PSL) is proposed.Due to a decrease in high temperature time,the TSPDG(PSL) process weakens the deterioration in performances of PSL,and increases the capability of impurity clusters to dissolve and diffuse to the gettering regions.By means of the TSPDG(PSL) process under conditions of 900℃/60 min + 700℃/30 min,the effective lifetime of minority carriers in solar-grade(SOG) Si is increased to 14.3 times ...
%K two-step phosphorous diffusion gettering
%K effective lifetime
%K porous silicon layer
%K solar-grade Si<br>两步磷扩散吸杂（TSPDG）
%K 有效寿命
%K 多孔硅层（PSL）
%K 太阳能级(SOG)硅
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A0FA1FF47852CF1948661E4940955163&yid=9377ED8094509821&vid=9971A5E270697F23&iid=38B194292C032A66&sid=42ED1DB9619E674C&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0