%0 Journal Article
%T A Ga-doped ZnO transparent conduct layer for GaN-based LEDs<br>Ga掺杂ZnO透明电极的研究
%A Liu Zhen
%A Wang Xiaofeng
%A Yang Hu
%A Duan Yao
%A Zeng Yiping
%A <br>刘祯
%A 王晓峰
%A 杨华
%A 段垚
%A 曾一平
%J 半导体学报
%D 2010
%I 
%X An 8 μ m thick Ga-doped ZnO (GZO) film grown by metal-source vapor phase epitaxy was deposited on a GaN-based light-emitting diode (LED) to substitute for the conventional ITO as a transparent conduct layer (TCL). Electroluminescence spectra exhibited that the intensity value of LED emission with a GZO TCL is markedly improved by 23.6% as compared to an LED with an ITO TCL at 20 mA. In addition, the forward voltage of the LED with a GZO TCL at 20 mA is higher than that of the conventional LED. To investigate the reason for the increase of the forward voltage, X-ray photoelectron spectroscopy was performed to analyze the interface properties of the GZO/p-GaN heterojunction. The large valence band offset (2.24± 0.21 eV) resulting from the formation of Ga2O3 in the GZO/p-GaN interface was attributed to the increase of the forward voltage.
%K Ga-doped ZnO film
%K light-emitting diode
%K electroluminescence spectra
%K X-ray photoelectron spectroscopy<br>Ga掺杂ZnO
%K 发光二极管
%K 电致发光
%K X射线光电子能谱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=ED5854DEEC5237D9EC242EC461FB574A&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=9CF7A0430CBB2DFD&sid=601CE9EB8EFF5B6C&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0