%0 Journal Article
%T Luminescence distribution and hole transport in asymmetric InGaN multiple-quantum well light-emitting diodes<br>非对称InGaN多量子阱发光二极管的发光分布和空穴输运
%A Ji Xiaoli
%A Yang Fuhu
%A Wang Junxi
%A Duan Ruifei
%A Ding Kai
%A Zeng Yiping
%A Wang Guohong
%A Li Jinmin
%A <br>姬小利
%A 杨富华
%A 王军喜
%A 段瑞飞
%A 丁凯
%A 曾一平
%A 王国宏
%A 李晋闽
%J 半导体学报
%D 2010
%I 
%X Asymmetric InGaN/GaN multiple-quantum well (MQW) light-emitting diodes were fabricated to expose the luminescence distribution and explore the hole transport. Under electrical injection, the sample with a wNQW active region in which the first QW nearest the p-side (QW1) is wider than the subsequent QWs shows a single long-wavelength light-emission peak arising from QW1. The inverse nWQW sample with a narrow QW1 shows one short-wavelength peak and one long-wavelength peak emitted separately from QW1 and the subsequent QWs. Increasing the barrier thickness between QW1 and the second QW (QWB1) in the nWQW structure, the long-wavelength peak is suppressed and the total light-emission intensity decreases. It was concluded that the nWQW and thin-QWB1 structure can improve the hole transport, and hence enhance the light-emission from the subsequent QWs and increase the internal quantum efficiency.
%K InGaN
%K asymmetric coupled multi-quantum-well
%K light-emitting diodes
%K luminescence distribution
%K hole transport<br>InGaN，非对称耦合多量子阱，发光二极管，发光分布，空穴输运
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=1C968CEBA4942C148D3A5A8020E10635&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=9CF7A0430CBB2DFD&sid=F44699A5B1351F1E&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0