%0 Journal Article
%T A novel double-trench LVTSCR used in the ESD protection of a RFIC<br>一种新的用于RFIC ESD保护的双槽LVTSCR
%A Li Li
%A Liu Hongxia
%A <br>李立
%A 刘红侠
%J 半导体学报
%D 2011
%I 
%X A low-voltage triggering silicon-controlled rectifier (LVTSCR), for its high efficiency and low parasitic parameters, has many advantages in ESD protection, especially in ultra-deep sub-micron (UDSM) IC and high frequency applications. In this paper, the impact factors of the snapback characteristics of a LVTSCR and the configuring modes are analyzed and evaluated in detail. These parameters include anode series resistance, gate voltage, structure and size of devices. In addition, a double-trench LVTSCR is presented that can increase the hold-on voltage effectively and offers easy adjustment. Also, its snapback characteristics can obey the ESD design window rule very well. The strategy of ESD protection in a RFIC using a LVTSCR is discussed at the end of the paper.
%K UDSM
%K LVTSCR
%K RFIC
%K ESD design window<br>ESD保护
%K 射频集成电路
%K 沟槽
%K 超深亚微米
%K RFIC
%K 寄生参数
%K 影响因素
%K 配置模式
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A0C0AC355ED3D7740986DA99900CBF7E&yid=9377ED8094509821&vid=9971A5E270697F23&iid=F3090AE9B60B7ED1&sid=74C702E39B92DFE2&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=15