%0 Journal Article
%T ESD protection design for the gate oxide of an RF-LDMOS<br>高压工艺下针对射频LDMOS器件栅氧的静电保护设计
%A Jiang Yibo
%A Du Huan
%A Zeng Chuanbin
%A Han Zhengsheng
%A <br>姜一波
%A 杜寰
%A 曾传滨
%A 韩郑生
%J 半导体学报
%D 2012
%I 
%X This paper presents the investigation of integrated electro-static discharge (ESD) protection design for the gate oxide of an RF-LDMOS (radio frequency lateral double diffusion MOS). Through a comprehensive discussion of experimental and simulated results, a cascoded NMOS is presented as appropriate integrated gate oxide ESD protection with a high holding voltage and a flexible ESD design window.
%K cascoded NMOS
%K ESD
%K high voltage technology
%K radio frequency lateral double diffusion MOS
%K BV engineering implant<br>ESD保护
%K 栅氧化层
%K 保护设计
%K 金属氧化物半导体
%K 静电放电
%K NMOS
%K 双扩散
%K 管理层
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=CEC329CE751EFFDA5E5AE60179578BC4&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=E158A972A605785F&sid=965880994F691C52&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8