%0 Journal Article
%T Wet etching and infrared absorption of AlN bulk single crystals<br>AlN单晶的位错腐蚀和红外吸收分析
%A Li Weiwei
%A Zhao Youwen
%A Dong Zhiyuan
%A Yang Jun
%A Hu Weijie
%A Ke Jianhong
%A <br>李巍巍
%A 赵有文
%A 董志远
%A 杨俊
%A 胡炜杰
%A 客建红
%J 半导体学报
%D 2009
%I 
%X The defects and the lattice perfection of an AlN (0001) single crystal grown by the physical vapor transport (PVT) method were investigated by wet etching, X-ray diffraction (XRD), and infrared absorption, respectively. A regular hexagonal etch pit density (EPD) of about 4000 cm-2 is observed on the (0001) Al surface of an AlN single crystal. The EPD exhibits a line array along the slip direction of the wurtzite structure, indicating a quite large thermal stress born by the crystal in the growth process. The XRD full width at half maximum (FWHM) of the single crystal is 35 arcsec, suggesting a good lattice perfection. Pronounced infrared absorption peaks are observed at wave numbers of 1790, 1850, 2000, and 3000 cm-1, respectively. These absorptions might relate to impurities O, C, Si and their complexes in AlN single crystals.
%K AlN
%K PVT
%K etching
%K defects<br>AlN
%K PVT
%K 腐蚀
%K 缺陷
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=FBBC2D34BE1653E7A1D024508841676E&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=DF92D298D3FF1E6E&sid=3BCC86B90A98F583&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0