%0 Journal Article
%T Phase separations in graded-indium content InGaN/GaN multiple quantum wells and its function to high quantum efficiency<br>渐变In组分InGaN/GaN多量子阱结构中的相分凝及其对提高量子效率的作用研究
%A Guo Hongying
%A Sun Yuanping
%A Yong-Hoon Cho
%A Eun-Kyung Suh
%A Hai-Joon Lee
%A Rak-Jun Choi
%A Yoon-Bong Hahn
%A <br>郭洪英
%A 孙元平
%A Yong-Hoon Cho
%A Eun-Kyung Suh
%A Hai-Joon Lee
%A Rak-Jun Choi
%A Yoon-Bong Hahn
%J 半导体学报
%D 2012
%I 
%X Phase separations have been studied for graded-indium content InxGa1-xN/GaN multiple quantum wells (MQWs) with different indium contents by means of photoluminescence (PL), cathodeluminescence (CL) and time-resolved PL (TRPL) techniques. Besides the main emission peaks, all samples show another 2 peaks at the high and low energy parts of the main peaks in PL when excited at 10 K. CL images show a clear contrast for 3 samples, which indicates an increasing phase separation with increasing indium content. TRPL spectra at 15 K of the main emissions show an increasing delay of rising time with indium content, which means a carrier transferring from low indium content structures to high indium content structures.
%K carrier transfer
%K phase separation
%K graded-indium content
%K multiple quantum wells<br>InGaN
%K 多量子阱
%K 铟含量
%K 相分离
%K 量子效率
%K 图像显示
%K 光致发光
%K TRPL
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9FDF75195748F95D130AD870EEDF1AC2&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=94C357A881DFC066&sid=4E75EA5EA06BF9D8&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13