%0 Journal Article
%T Electrical Characteristic Measurement of the Fabricated CdSe / P-Si Heterojunction Solar Cell under Radiation Effect
%J Microelectronics and Solid State Electronics
%@ 2324-6456
%D 2012
%I 
%R 10.5923/j.msse.20120102.04
%X The electrical and photovoltaic properties of CdSe/p-Si heterojunction solar cells prepared by evaporation cooting on a single-crystal p-type silicon substrates are examined, under(100) mw/cm2, 25¡æ. The best fabricated cell shows an open-circuit voltage before irradiation is(0.62V) and after irradiation is(0.44 V ). The short-circuit current density before irradiation is(34 mA/cm2) and after irradiation is(13 mA/cm2). The fill factor before irradiation is(53 %) and after irradiation is(44.7 %). The conversion efficiency(active area ) before irradiation is(11.1%) and after irradiation is(2.5%) .was observed during two-hour illumination test and after storing the cell in air for three months. The illumination is from the CdSe side(frontwall ) .The cells are analyzed using I-V and P-V measurements, spectral response and 1/C2-V measurements, with focus on the influence of the solar cell thickness, light intensity illumination and effective dose of ¦Ã-radiation, which play a crucial role to improve the solar cell efficiency. ¦Ã-irradiation campaign with different doses has been carried out on a series of solar cells.
%K n-CdSe/ P-Si Cells Performance
%K ¦Ã-radiation Effects
%K Electrical and Photovoltaic Characteristics
%U http://article.sapub.org/10.5923.j.msse.20120102.04.html