%0 Journal Article
%T A New Spice Macromodel of 4H-SiC Vertical Double Implanted MOSFET (DIMOS)
%J Microelectronics and Solid State Electronics
%@ 2324-6456
%D 2012
%I 
%R 10.5923/j.msse.20120105.02
%X The4H-SiCvertical double Implanted MOSFET (DIMOS) offers advantages over conventional silicon devices, enabling high system efficiency and/or reduced system size, weight and cost through its higher frequency operation. Compared to the best silicon IGBTs, the SiC device will improve system efficiency up to 2% and operate at 2-5 times the switching frequencies.In this paper we present an equivalent circuit Spice of 4H-SiC DIMOSFET for a wide temperature range. Simulation for DC characteristics (I-V) of the SiC MOSFET with the exact device geometry is carried out using the commercial device simulator Spice. All Spice parameters are extracted from the measurements, and a SPICE model for the DIMOS transistor has been developed and implemented in the circuit simulator Orcad PSpice 10.5. The temperature dependent behaviour was simulated and analysed. A good agreement between the Spice simulation and analytical model evaluation for SiC DIMOS is demonstrated. Model parameters can be adjusted to obtain an optimum device to be used in power system applications.
%K Power Device
%K 4H-SiC DIMOSFET
%K Macromodel
%K Analytical Model
%K Spice
%K Temperature Variation Effect
%U http://article.sapub.org/10.5923.j.msse.20120105.02.html