%0 Journal Article
%T Selective Wet-Etching of Amorphous/Crystallized Sb-Se Thin Films
%A O. Shiman
%A V. Gerbreders
%A E. Sledevskis
%A A. Bulanovs
%J Latvian Journal of Physics and Technical Sciences
%D 2012
%I Versita
%R 10.2478/v10047-012-0010-8
%X The paper is focused on the development of an in situ real-time method for studying the process of wet chemical etching of thin films. The results of studies demonstrate the adequate etching selectivity for all thin film SbxSe100-x (x = 0, 20, 40, 50, 100) compositions under consideration. Different etching rates for the as-deposited and laser exposed areas were found to depend on the sample composition. The highest achieved etching rate was 1.8 nm/s for Sb40Se60 samples.
%K chalcogenide thin film
%K amorphous and crystalline phases
%K etching rate
%U http://versita.metapress.com/content/a207846267831416/?p=0cf651d091314bf2a26c19f43de734c4&pi=3