%0 Journal Article
%T P-ZnO/n-Si Photodiodes Prepared by Ultrasonic Spraying Pyrolysis Method
%A Lung-Chien Chen and Chun-Nan Pan
%J The Open Crystallography Journal
%D 2008
%I 
%R 10.2174/1874846500801010010
%X ZnO ultraviolet (UV)/visible photodiodes were fabricated. The N-In codoped p-type ZnO films were deposited on (111)-oriented silicon substrate by ultrasonic spraying pyrolysis method. It was found the photocurrent approximately 3.9x10-7 A at a bias of 1 V and a photocurrent to dark current contrast ratio higher than around two orders of magnitude. The photodiodes exhibited two higher responsive regions denoted as A and B, respectively. Region A at wavelength from 400 nm to 700 nm was owing to ZnO film absorption occurring through the band-to-deep level, and region B at wavelength from 700 nm to 1000 nm was owing to Si substrate absorption occurring through the band edge.
%U http://www.benthamscience.com/open/tocryj/articles/V001/10TOCRYJ.htm