%0 Journal Article
%T High quality p-type ZnO film growth by a simple method and its properties
%A FeiYan Mao
%A Hong Deng
%A LiPing Dai
%A JinJu Chen
%A ZhaoLin Yuan
%A Yan Li
%J Chinese Science Bulletin
%@ 1861-9541
%D 2008
%I 
%R 10.1007/s11434-008-0357-7
%X P-type ZnO:N films have been grown successfully by chemical vapor deposition (CVD) using Zn4(OH)2(O2CCH3)6 ¡¤ 2H2O as the solid source material and ZnNO3 as the doping source material. XPS, Hall-effect measurement and PL spectra were employed to analyze the structural, electrical and optical properties and study the influence of substrate temperature on the film. Results showed that with a lower substrate temperature, the film exhibited p-type conduction and its resistivity decreased when the substrate temperature increased. When the substrates temperature was 400¡ãC, p-type ZnO films were obtained with carrier concentration of +5.127¡Á1017 cm 3, resistivity of 0.04706 ¦¸ ¡¤ cm and Hall mobility of 259 cm2/(V ¡¤ s); they still exhibited p-type conduction after a month. When the substrate temperature was too high, the film was transformed from p-type to n-type conduction.
%K CVD
%K ZnO:N film
%K p-type
%K Hall mobility
%K carrier concentration
%U http://link.springer.com/article/10.1007/s11434-008-0357-7