%0 Journal Article
%T Analytical and Numerical Model Confrontation for Transfer Impedance Extraction in Three-Dimensional Radio Frequency Circuits
%A Olivier Valorge
%A Fengyuan Sun
%A Jean-Etienne Lorival
%A Mohamed Abouelatta-Ebrahim
%A Francis Calmon
%A Christian Gontrand
%J Circuits and Systems
%P 126-135
%@ 2153-1293
%D 2012
%I Scientific Research Publishing
%R 10.4236/cs.2012.32017
%X 3D chip stacking is considered known to overcome conventional 2D-IC issues, using through silicon vias to ensure vertical signal transmission. From any point source, embedded or not, we calculate the impedance spread out; our ultimate goal will to study substrate noise via impedance field method. For this, our approach is twofold: a compact Green function or a Transmission Line Model over a multi-layered substrate is derived by solving Poisson¡¯s equation analytically. The Discrete Cosine Transform (DCT) and its variations are used for rapid evaluation. Using this technique, the substrate coupling and loss in IC¡¯s can be analyzed. We implement our algorithm in MATLAB; it permits to extract impedances between any pair of embedded contacts. Comparisons are performed using finite element methods.
%K Through Silicon Via (TSV)
%K Green¡¯s Function
%K Transmission Line Model
%K Radio Frequency (RF)
%K Transfer Impedance Extraction
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=18530