%0 Journal Article
%T Feasibility Study to Evaluate Lattice-Space Changing of a Step-Graded SiGe/Si (110) Using STEM Moiré
%A Junji Yamanaka
%A Mai Shirakura
%A Chiaya Yamamoto
%A Kei Sato
%A Takane Yamada
%A Kosuke O. Hara
%A Keisuke Arimoto
%A Kiyokazu Nakagawa
%A Akimitsu Ishizuka
%A Kazuo Ishizuka
%J Journal of Materials Science and Chemical Engineering
%P 8-15
%@ 2327-6053
%D 2018
%I Scientific Research Publishing
%R 10.4236/msce.2018.67002
%X <div style=\"text-align:justify;\">
	A moir¨¦ between crystal lattice planes and scanning electron beam-lines formed in a scanning transmission electron microscope includes the information of the lattice spacing. We apply these phenomena to a compositionally graded SiGe thin film deposited onto a Si substrate by molecular beam epitaxy method. The results of the experiments and image analysis show the potential of this technique to analyze a slight change of the lattice spacing according to a compositional change.
</div>
%K STEM Moir&#233
%K SiGe
%K Scanning Transmission Electron Microscopy
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=85783