%0 Journal Article
%T Hole-Buffer Material Derived from Pyrene, Schiff Base and Tris to Enhance Emission Efficiency of Polymer Light-Emitting Diodes
%A Jyun-Huei Liou
%A Ping-Feng Hsu
%A Yun Chen
%J Journal of Materials Science and Chemical Engineering
%P 31-46
%@ 2327-6053
%D 2018
%I Scientific Research Publishing
%R 10.4236/msce.2018.63003
%X Inserting a hole-buffer layer is an effective way to enhance emission efficiency of electroluminescence devices. We have successfully synthesized a new hole-buffer material PSB composed of pyrene, Schiff base and trihydroxy <em>tert</em>-butyl groups by the Suzuki-coupling reaction. The HOMO and LUMO lev-els were -6.33 eV and -2.55 eV, respectively, as estimated from cyclic volt-ammograms. In addition, homogeneous films (rms roughness ~2 nm) were readily obtained by spin-coating process. Multilayer polymer light-emitting diodes, ITO/PEDOT:PSS/PSB/SY/LiF/Al, have been fabricated using PSB as hole-buffer layer (HBL). Inserting PSB as HBL significantly enhances the per-formance (maximum luminance: 26,439 cd/m<sup>2</sup>, maximum current efficiency: 7.03 cd/A), compared with the one without PSB (9802 cd/m<sup>2</sup>, 2.43 cd/A). It is also superior to the device with conventional BCP as hole-blocking layer (ITO/PEDOT:PSS/SY/BCP/LiF/Al: 15,496 cd/m<sup>2</sup>, 5.56 cd/A). Current results strongly indicate that the PSB is a potential hole-buffer material for electrolu-minescent devices.
%K Hole-Buffer
%K Polymer Light-Emitting Diodes
%K Pyrene
%K Schiff Base
%K Spin-Coating
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=83145