%0 Journal Article
%T STEM Moiré Observation of Lattice-Relaxed Germanium Grown on Silicon
%A Junji Yamanaka
%A Chiaya Yamamoto
%A Hiroki Nakaie
%A Tetsuji Arai
%A Keisuke Arimoto
%A Kosuke O. Hara
%A Kiyokazu Nakagawa
%J Journal of Materials Science and Chemical Engineering
%P 102-108
%@ 2327-6053
%D 2017
%I Scientific Research Publishing
%R 10.4236/msce.2017.51014
%X <div style=\"text-align:justify;\">
	<span style=\"line-height:1.5;\">We deposited Ge films on Si substrates by molecular beam epitaxy (MBE) method. The specimens were annealed at around 750 C using microwave- plasma heating technique which we had reported before. After these pro- cesses, we carried out special scanning transmission electron microscopic (STEM) observation. The moir¨¦ between the crystal lattices and the scanning lines controlled by STEM was utilized to show lattice-spacing distribution. The results exhibited that we were succeeded in forming lattice-relaxed Ge thin films. It was also recognized that this STEM moir¨¦ technique is very useful to observe lattice-spacing distribution for large area with high resolution.</span>
</div>
%K STEM Moir&#233
%K Lattice Strain
%K Ge on Si
%K Plasma Heating
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=73668