%0 Journal Article
%T Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs on Ge Layers
%A Hiroki Nakaie
%A Tetsuji Arai
%A Chiaya Yamamoto
%A Keisuke Arimoto
%A Junji Yamanaka
%A Kiyokazu Nakagawa
%A Toshiyuki Takamatsu
%J Journal of Materials Science and Chemical Engineering
%P 42-47
%@ 2327-6053
%D 2017
%I Scientific Research Publishing
%R 10.4236/msce.2017.51006
%X <div style=\"text-align:justify;\">
	<span style=\"line-height:1.5;\">We</span><span style=\"line-height:1.5;\"> have developed a microwave plasma heating technique to rapidly heat the transition metal. W/SiO2 layers were deposited on Ge/Si heterostructures. By heating the W, dislocations in Ge layers originated from lattice mismatch between Ge and Si crystals were reduced drastically. We have fabricated p- MOSFETs on Ge/Si substrates and realized higher mobility of about 380 cm2/ Vs than that of Si p-MOSFET.</span> 
</div>
%K Microwave Plasma Heating
%K High Hole Mobility
%K Ge on Si
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=73258