%0 Journal Article
%T Ohmic Contact Formation for n+4H-SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation
%A Tetsuji Arai
%A Kazuki Kamimura
%A Chiaya Yamamoto
%A Mai Shirakura
%A Keisuke Arimoto
%A Junji Yamanaka
%A Kiyokazu Nakagawa
%A Toshiyuki Takamatsu
%A Masaaki Ogino
%A Masaaki Tachioka
%A Haruo Nakazawa
%J Journal of Materials Science and Chemical Engineering
%P 35-41
%@ 2327-6053
%D 2017
%I Scientific Research Publishing
%R 10.4236/msce.2017.51005
%X <div style=\"text-align:justify;\">
	<span style=\"line-height:1.5;\">We developed an apparatus for producing high-density hydrogen plasma. We confirmed that the temperatures of transition-metal films increased to above 800?C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied this phenomenon to the selective heat treatment of W/Ni films deposited on n+4H-SiC wafers and formed nickel silicide electrodes. To utilize this method, we can perform the nickel silicidation process without heating the other areas such as channel regions and improve the reliability.</span> 
</div>
%K Selective Heating
%K Nickel Silicide Electrode
%K Hydrogen Plasma
%K Ohmic  Contact
%K SiC
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=73256