%0 Journal Article
%T TEM and STEM Observations of a Flat Continuous Silicon-Germanium Thin Film Epitaxially Grown on Porous Silicon
%A Junji Yamanaka
%A Noritaka Usami
%A Sevak Amtablian
%A Alain Fave
%A Mustapha Lemiti
%A Chiaya Yamamoto
%A Kiyokazu Nakagawa
%J Journal of Materials Science and Chemical Engineering
%P 26-34
%@ 2327-6053
%D 2017
%I Scientific Research Publishing
%R 10.4236/msce.2017.51004
%X
Strain-relaxed SiGe is an attractive material for use as a substrate of strained Si, in which carrier mobility is higher than that of bulk Si. The concept of this study is the use of porous Si as a sponge like substrate so that a SiGe lattice can relax without introducing dislocations. We produced porous Si specimens by electrochemical anodization and annealed them under a H2 atmosphere. Then, SiGe thin films were grown by gas-source molecular beam epitaxy. We observed the microstructure of the specimens using transmission electron microscopy. The result showed that we succeeded in producing a single-crys- tal continuous Si0.73Ge0.27 film with a 10% relaxation ratio and a low dislocation density on porous Si.
%K Porous Silicon
%K Silicon Germanium
%K Strain Relaxation
%K Strained Silicon
%K Nanostructure
%K High-Mobility Semiconductors
%K Transmission Electron Microscopy
%U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=73255