%0 Journal Article %T TEM and STEM Observations of a Flat Continuous Silicon-Germanium Thin Film Epitaxially Grown on Porous Silicon %A Junji Yamanaka %A Noritaka Usami %A Sevak Amtablian %A Alain Fave %A Mustapha Lemiti %A Chiaya Yamamoto %A Kiyokazu Nakagawa %J Journal of Materials Science and Chemical Engineering %P 26-34 %@ 2327-6053 %D 2017 %I Scientific Research Publishing %R 10.4236/msce.2017.51004 %X
Strain-relaxed SiGe is an attractive material for use as a substrate of strained Si, in which carrier mobility is higher than that of bulk Si. The concept of this study is the use of porous Si as a sponge like substrate so that a SiGe lattice can relax without introducing dislocations. We produced porous Si specimens by electrochemical anodization and annealed them under a H2 atmosphere. Then, SiGe thin films were grown by gas-source molecular beam epitaxy. We observed the microstructure of the specimens using transmission electron microscopy. The result showed that we succeeded in producing a single-crys- tal continuous Si0.73Ge0.27 film with a 10% relaxation ratio and a low dislocation density on porous Si.
%K Porous Silicon %K Silicon Germanium %K Strain Relaxation %K Strained Silicon %K Nanostructure %K High-Mobility Semiconductors %K Transmission Electron Microscopy %U http://www.scirp.org/journal/PaperInformation.aspx?PaperID=73255