%0 Journal Article
%T Electron spin resonance and spin-valley physics in a silicon double quantum dot
%A Xiaojie Hao
%A Rusko Ruskov
%A Ming Xiao
%A Charles Tahan
%A HongWen Jiang
%J Physics
%D 2013
%I arXiv
%R 10.1038/ncomms4860
%X Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based double quantum dot under electron spin resonance. An anticrossing of the driven dot energy levels is observed when the Zeeman and valley splittings coincide. A detected anticrossing splitting of 60 MHz is interpreted as a direct measure of spin and valley mixing, facilitated by spin-orbit interaction in the presence of non-ideal interfaces. A lower bound of spin dephasing time of 63 ns is extracted. We also describe a possible experimental evidence of an unconventional spin-valley blockade, despite the assumption of non-ideal interfaces. This understanding of silicon spin-valley physics should enable better control and read-out techniques for the spin qubits in an all CMOS silicon approach.
%U http://arxiv.org/abs/1311.5937v2