%0 Journal Article
%T Single Dirac-cone on the Cs-covered topological insulator surface Sb2Te3(0001)
%A Christoph Seibel
%A Henriette Maa£¿
%A Minoru Ohtaka
%A Sebastian Fiedler
%A Christian J¨¹nger
%A Chul-Hee Min
%A Hendrik Bentmann
%A Kazuyuki Sakamoto
%A Friedrich Reinert
%J Physics
%D 2012
%I arXiv
%R 10.1103/PhysRevB.86.161105
%X Using angle-resolved photoelectron spectroscopy we investigate the surface electronic structure of the three-dimensional topological insulator (TI) Sb2Te3(0001). Our data show the presence of a topological surface state in the bulk energy gap with the Dirac-point located above the Fermi level. The adsorption of Cs-atoms on Sb2Te3(0001) gives rise to a downward energy shift of the electronic valence band states which saturates at a value of ~200 meV. For the saturation coverage the Dirac-point of the linearly dispersive surface state resides in close proximity to the Fermi level. The electronic structure of the Cs/Sb2Te3 interface therefore considerably deviates from previously studied metal-TI interfaces based on the isostructural compound Bi2Se3 which points to the importance of atomic composition in these hetero systems.
%U http://arxiv.org/abs/1209.4263v1