%0 Journal Article
%T Silicon-carbon bond inversions driven by 60 keV electrons in graphene
%A Toma Susi
%A Jani Kotakoski
%A Demie Kepaptsoglou
%A Clemens Mangler
%A Tracy C. Lovejoy
%A Ondrej L. Krivanek
%A Recep Zan
%A Ursel Bangert
%A Paola Ayala
%A Jannik C. Meyer
%A Quentin Ramasse
%J Physics
%D 2014
%I arXiv
%R 10.1103/PhysRevLett.113.115501
%X We demonstrate that 60 keV electron irradiation drives the diffusion of threefold coordinated Si dopants in graphene by one lattice site at a time. First principles simulations reveal that each step is caused by an electron impact on a C atom next to the dopant. Although the atomic motion happens below our experimental time resolution, stochastic analysis of 38 such lattice jumps reveals a probability for their occurrence in a good agreement with the simulations. Conversions from three- to fourfold coordinated dopant structures and the subsequent reverse process are significantly less likely than the direct bond inversion. Our results thus provide a model of non-destructive and atomically precise structural modification and detection for two-dimensional materials.
%U http://arxiv.org/abs/1407.4274v2