%0 Journal Article
%T Ab initio Study of Graphene on SiC
%A Alexander Mattausch
%A Oleg Pankratov
%J Physics
%D 2007
%I arXiv
%R 10.1103/PhysRevLett.99.076802
%X Employing density-functional calculations we study single and double graphene layers on Si- and C-terminated 1x1-6H-SiC surfaces. We show that, in contrast to earlier assumptions, the first carbon layer is covalently bonded to the substrate, and cannot be responsible for the graphene-type electronic spectrum observed experimentally. The characteristic spectrum of free-standing graphene appears with the second carbon layer, which exhibits a weak van der Waals bonding to the underlying structure. For Si-terminated substrate, the interface is metallic, whereas on C-face it is semiconducting or semimetallic for single or double graphene coverage, respectively.
%U http://arxiv.org/abs/0704.0216v2